sm8s series vishay semiconductors formerly general semiconductor document number 88387 www.vishay.com 04-jun-04 1 new product surface mount automotive transient voltage suppressors stand-off voltage 10 to 43v peak pulse power 6600w (10/1000 s) 5200w (10/10,000 s) maximum ratings and thermal characteristics (t c = 25? unless otherwise noted) parameter symbol value unit peak pulse power dissipation with 10/1000 s waveform 6600 10/10,000 s waveform p ppm 5200 w steady state power dissipation p d 8.0 w peak pulse current with a 10/1000 s waveform (1) i ppm see table 1 a peak forward surge current, 8.3ms single half sine-wave i fsm 700 a typical thermal resistance junction to case r jc 0.90 ?/w operating junction and storage temperature range t j , t stg -55 to +175 ? notes: (1) non-repetitive current pulse derated above t a =25? 0.093(2.4) 0.116(3.0) 0.059(1.5) 0.098(2.5) 0.098(2.5) 0.138(3.5) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) 0.342(8.7) 0.327(8.3) 0.413(10.5) 0.374(9.5) 0.539(13.7) 0.524(13.3) lead 2/metal heatsink 0.020(0.5) 0.028(0.7) 0.016 (0.4) min. 0.197(5.0) 0.185(4.7) lead 1 0.628(16.0) 0.592(15.0) extended voltage range * patent # s: 4,980,315 5,166,769 5,278,095 features ?ideally suited for load dump protection ?plastic package has underwriters laboratory flammability classification 94v-0 ?high temperature stability due to unique oxide passiva- tion and patented par construction ?integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation ?low leakage current at t j = 175? ?high temperature soldering guaranteed: 260? for 10 seconds at terminals ?meets iso7637-2 surge spec. ?low forward voltage drop 0.413(10.5) 0.374(9.5) 0.366(9.3) 0.343(8.7) 0.606(15.4) 0.583(14.8) 0.150(3.8) 0.126(3.2) 0.091(2.3) 0.067(1.7) 0.116(3.0) 0.093(2.4) mounting pad layout mechanical data case: molded plastic body, surface mount with heatsink integrally mounted in the encapsulation terminals: plated, solderable per mil-std-750, method 2026 polarity: heatsink is anode mounting position: any weight: 0.091 oz., 2.58 g packaging codes/options: 2d/750 per 13" reel (16mm tape), anode towards sprocket hole, 4.5k/box 2e/750 per 13" reel (16mm tape), cathode towards sprocket hole, 4.5k/box do-218ab dimensions in inches and (millimeters) patented*
sm8s series vishay semiconductors formerly general semiconductor www.vishay.com document number 88387 2 04-jun-04 electrical characteristics (t c = 25? unless otherwise noted) maximum maximum max. peak maximum reverse reverse pulse clamping device type breakdown voltage t est current stand-off leakage leakage current voltage at v (br) i t voltage at v wm at v wm at 10/1000 si ppm (v) v wm i d tc = 175 o c waveform v c min. max. (ma) (v) ( a) i d ( a) (a) (v) sm8s10 11.1 13.6 5.0 10 15 250 351 18.8 sm8s10a 11.1 12.3 5.0 10 15 250 388 17.0 sm8s11 12.2 14.9 5.0 11 10 150 328 20.1 sm8s11a 12.2 13.5 5.0 11 10 150 363 18.2 sm8s12 13.3 16.3 5.0 12 10 150 300 22.0 sm8s12a 13.3 14.7 5.0 12 10 150 332 19.9 sm8s13 14.4 17.6 5.0 13 10 150 277 23.8 sm8s13a 14.4 15.9 5.0 13 10 150 307 21.5 sm8s14 15.6 19.1 5.0 14 10 150 256 25.8 sm8s14a 15.6 17.2 5.0 14 10 150 284 23.2 sm8s15 16.7 20.4 5.0 15 10 150 245 26.9 sm8s15a 16.7 18.5 5.0 15 10 150 270 24.4 sm8s16 17.8 21.8 5.0 16 10 150 229 28.8 sm8s16a 17.8 19.7 5.0 16 10 150 254 26.0 sm8s17 18.9 23.1 5.0 17 10 150 216 30.5 sm8s17a 18.9 20.9 5.0 17 10 150 239 27.6 sm8s18 20.0 24.4 5.0 18 10 150 205 32.2 sm8s18a 20.0 22.1 5.0 18 10 150 226 29.2 sm8s20 22.2 27.1 5.0 20 10 150 184 35.8 sm8s20a 22.2 24.5 5.0 20 10 150 204 32.4 sm8s22 24.4 29.8 5.0 22 10 150 168 39.4 sm8s22a 24.4 26.9 5.0 22 10 150 186 35.5 sm8s24 26.7 32.6 5.0 24 10 150 153 43.0 sm8s24a 26.7 29.5 5.0 24 10 150 170 38.9 sm8s26 28.9 35.3 5.0 26 10 150 142 46.6 sm8s26a 28.9 31.9 5.0 26 10 150 157 42.1 sm8s28 31.1 38.0 5.0 28 10 150 132 50.1 sm8s28a 31.1 34.4 5.0 28 10 150 145 45.4 sm8s30 33.3 40.7 5.0 30 10 150 123 53.5 sm8s30a 33.3 36.8 5.0 30 10 150 136 48.4 sm8s33 36.7 44.9 5.0 33 10 150 112 59.0 sm8s33a 36.7 40.6 5.0 33 10 150 124 53.3 sm8s36 40.0 48.9 5.0 36 10 150 103 64.3 sm8s36a 40.0 44.2 5.0 36 10 150 114 58.1 sm8s40 44.4 54.3 5.0 40 10 150 92.4 71.4 sm8s40a 44.4 49.1 5.0 40 10 150 102 64.5 sm8s43 47.8 58.4 5.0 43 10 150 86.0 76.7 sm8s43a 47.8 52.8 5.0 43 10 150 95.1 69.4 note: for all types maximum v f = 1.8v at i f = 100a measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
sm8s series vishay semiconductors formerly general semiconductor document number 88387 www.vishay.com 04-jun-04 3 ratings and characteristic curves (t a = 25? unless otherwise noted) power derating curve 0 2.0 4.0 6.0 8.0 0 50 100 150 200 power dissipation (w) reverse surge power (w) pulse width (ms) ?1/2 i pp exponential waveform 1,000 10,000 10 100 case temperature ( c) 0 50 100 150 0 10 20 30 40 input peak pulse current % time, ms (t) pulse waveform reverse power capability t a = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50% of i pp t d t r = 10 s peak value i pp half value i pp 2 load dump power characteristics (10ms exponential waveform) 0 2,000 1,000 3,000 4,000 5,000 6,000 25 50 75 100 125 150 175 load dump power (w) case temperature ( c) transient thermal impedance ( c/w) 0.01 110 100 10 1 100 0.01 0.1 t ?pulse width (sec.) 0.1 r ja r jc typical transient thermal impedance
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